relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2914/
title: Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications
creator: Vu, Tuan Anh
creator: Takano, Kyoya
creator: Fujishima, Minoru
subject: Electronics and Communications
subject: Scopus-indexed journals
description: This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.
publisher: Institute of Advanced Engineering and Science
date: 2018-04
type: Article
type: NonPeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2914/1/DBand_Amplifier.pdf
identifier:   Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru  (2018) Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications.  International Journal of Electrical and Computer Engineering, 8  (2).    ISSN 2088-8708    (In Press)  
relation: http://www.iaescore.com/journals/index.php/IJECE/index