TY  - INPR
ID  - SisLab2914
UR  - http://www.iaescore.com/journals/index.php/IJECE/index
IS  - 2
A1  - Vu, Tuan Anh
A1  - Takano, Kyoya
A1  - Fujishima, Minoru
Y1  - 2018/04//
N2  - This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.
PB  - Institute of Advanced Engineering and Science
JF  - International Journal of Electrical and Computer Engineering
VL  - 8
SN  - 2088-8708
TI  - Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications
AV  - public
ER  -