eprintid: 2914
rev_number: 8
eprint_status: archive
userid: 342
dir: disk0/00/00/29/14
datestamp: 2018-01-12 02:03:51
lastmod: 2018-01-12 02:03:51
status_changed: 2018-01-12 02:03:51
type: article
metadata_visibility: show
creators_name: Vu, Tuan Anh
creators_name: Takano, Kyoya
creators_name: Fujishima, Minoru
creators_id: tanhvu@vnu.edu.vn
creators_id: kyoya@hiroshima-u.ac.jp
creators_id: fuji@hiroshima-u.ac.jp
title: Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications
ispublished: inpress
subjects: ECE
subjects: Scopus
divisions: fac_fet
abstract: This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.
date: 2018-04
date_type: published
publisher: Institute of Advanced Engineering and Science
official_url: http://www.iaescore.com/journals/index.php/IJECE/index
full_text_status: public
publication: International Journal of Electrical and Computer Engineering
volume: 8
number: 2
refereed: FALSE
issn: 2088-8708
citation:   Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru  (2018) Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications.  International Journal of Electrical and Computer Engineering, 8  (2).    ISSN 2088-8708    (In Press)  
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2914/1/DBand_Amplifier.pdf