eprintid: 2926
rev_number: 12
eprint_status: archive
userid: 342
dir: disk0/00/00/29/26
datestamp: 2018-04-10 06:34:01
lastmod: 2018-04-10 06:34:01
status_changed: 2018-04-10 06:34:01
type: article
metadata_visibility: show
creators_name: Vu, Tuan Anh
creators_name: Takano, Kyoya
creators_name: Fujishima, Minoru
creators_id: tanhvu@vnu.edu.vn
creators_id: kyoya@hiroshima-u.ac.jp
creators_id: fuji@hiroshima-u.ac.jp
title: 300-GHz Balanced Varactor Doubler in Silicon CMOS for Ultrahigh-Speed Wireless Communications
ispublished: pub
subjects: ECE
subjects: isi
divisions: fac_fet
abstract: This letter presents a 300 GHz transmitter front-end suitable for ultrahigh-speed wireless communications. The transmitter front-end realized in TSMC 40 nm CMOS consists of a varactor based doubler driven by a three-stage D-band power amplifier (PA). Measurement results show that the D-band PA obtains a saturated power of 6.1 dBm and a power added efficiency (PAE) of 4.3%. The balanced varactor doubler results in an output power of -12 dBm at 300 GHz. The transmitter front-end consumes a total DC power of 72.9 mW from a 0.9 V supply voltage while it occupies an area of 0.72 mm2.
date: 2018-04
date_type: published
id_number: 10.1109/LMWC.2018.2811249
contact_email: tanhvu@vnu.edu.vn
full_text_status: restricted
publication: IEEE Microwave and Wireless Components Letters
volume: 28
number: 4
pagerange: 341-343
refereed: FALSE
issn: 1558-1764
citation:   Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru  (2018) 300-GHz Balanced Varactor Doubler in Silicon CMOS for Ultrahigh-Speed Wireless Communications.  IEEE Microwave and Wireless Components Letters, 28  (4).   pp. 341-343.  ISSN 1558-1764     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/2926/1/08316256.pdf