TY  - INPR
ID  - SisLab2998
UR  - https://www.sciencedirect.com/science/article/pii/S0040609018301809?via%3Dihub
A1  - Nguyen, Quang Hoa
A1  - Nguyen, Van Dung
A1  - Fujiwara, Akihiko
A1  - Bui, Nguyen Quoc Trinh
Y1  - 2018///
N2  - Presented herein is a report on cupric oxide (CuO) thin films prepared on glass substrates by using a solution process with varying nominal concentrations of Cu2+ ions at 0.15 M, 0.20 M, and 0.25 M. X-ray diffraction patterns and scanning electron microscopy (SEM) micrographs were analyzed to evaluate the crystalline structure and surface morphology of the CuO thin films. The fabricated CuO thin films exhibited a single-phased monoclinic structure with (200) and (111) orientations. The grain size of the CuO thin films was observed to increase with higher concentration, by SEM observation. The electrical and optical properties of the CuO thin films were investigated using a four-probe measurement system and UV/VIS spectrometer, respectively. The thin films showed a minimum resistivity of 0.085 ?cm corresponding to the 0.25 M concentration, and a bandgap energy ranging from 2.10 eV to 2.15 eV. In addition, the light-harvesting ability of CuO thin films was considered by the absorption figure of merit (a-FOM), in correlation with the global solar spectrum. A maximum a-FOM value of 12.79 ?-1cm-1 was attained for the sample with a Cu2+ ion concentration of 0.25 M.
PB  - Switzerland
JF  - Thin Solid Film
SN  - 0040-6090
TI  - Solution-processed CuO thin films with various Cu2+ ion concentrations
AV  - public
ER  -