@inproceedings{SisLab3001,
       booktitle = {The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)},
           title = {Investigation on solution-processed In-Si-O thin film transistor via spin-coating method},
          author = {Ha Hoang and Tatsuki Hori and To-oru Yasuda and Takio Kizu and Kazuhito Tsukagoshi and Toshihide Nabatame and Nguyen Quoc Trinh Bui and Akihiko Fujiwara},
            year = {2018},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001/},
        abstract = {In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.\% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 ?C regardless the film thickness. The best ISO TFT showed the value of VT of ?5 V, ? of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.}
}