relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001/
title: Investigation on solution-processed In-Si-O thin film transistor via spin-coating method
creator: Hoang, Ha
creator: Hori, Tatsuki
creator: Yasuda, To-oru
creator: Kizu, Takio
creator: Tsukagoshi, Kazuhito
creator: Nabatame, Toshihide
creator: Bui, Nguyen Quoc Trinh
creator: Fujiwara, Akihiko
subject: Engineering Physics
description: In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.
date: 2018
type: Conference or Workshop Item
type: PeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001/1/Manuscript_FPD2018.pdf
identifier:   Hoang, Ha and Hori, Tatsuki and Yasuda, To-oru and Kizu, Takio and Tsukagoshi, Kazuhito and Nabatame, Toshihide and Bui, Nguyen Quoc Trinh and Fujiwara, Akihiko  (2018) Investigation on solution-processed In-Si-O thin film transistor via spin-coating method.  In: The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 3-6 July 2018, Kyoto, Japan.     
relation: http://www.amfpd.jp