%0 Conference Paper
%A Hoang, Ha
%A Hori, Tatsuki
%A Yasuda, To-oru
%A Kizu, Takio
%A Tsukagoshi, Kazuhito
%A Nabatame, Toshihide
%A Bui, Nguyen Quoc Trinh
%A Fujiwara, Akihiko
%B The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
%C Kyoto, Japan
%D 2018
%F SisLab:3001
%T Investigation on solution-processed In-Si-O thin film transistor via spin-coating method
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001/
%X In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.