TY  - CONF
ID  - SisLab3001
UR  - http://www.amfpd.jp
A1  - Hoang, Ha
A1  - Hori, Tatsuki
A1  - Yasuda, To-oru
A1  - Kizu, Takio
A1  - Tsukagoshi, Kazuhito
A1  - Nabatame, Toshihide
A1  - Bui, Nguyen Quoc Trinh
A1  - Fujiwara, Akihiko
Y1  - 2018///
N2  - In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of ?5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.
TI  - Investigation on solution-processed In-Si-O thin film transistor via spin-coating method
M2  - Kyoto, Japan
AV  - public
T2  - The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
ER  -