%A Ha Hoang
%A Tatsuki Hori
%A To-oru Yasuda
%A Takio Kizu
%A Kazuhito Tsukagoshi
%A Toshihide Nabatame
%A Nguyen Quoc Trinh Bui
%A Akihiko Fujiwara
%T Investigation on solution-processed In-Si-O thin film transistor via spin-coating method
%X In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.
%C Kyoto, Japan
%D 2018
%L SisLab3001