eprintid: 3001 rev_number: 15 eprint_status: archive userid: 303 dir: disk0/00/00/30/01 datestamp: 2018-11-24 01:58:46 lastmod: 2018-11-24 01:58:46 status_changed: 2018-11-24 01:58:46 type: conference_item metadata_visibility: show creators_name: Hoang, Ha creators_name: Hori, Tatsuki creators_name: Yasuda, To-oru creators_name: Kizu, Takio creators_name: Tsukagoshi, Kazuhito creators_name: Nabatame, Toshihide creators_name: Bui, Nguyen Quoc Trinh creators_name: Fujiwara, Akihiko creators_id: trinhbnq@vnu.edu.vn title: Investigation on solution-processed In-Si-O thin film transistor via spin-coating method ispublished: pub subjects: Phys divisions: fac_physic abstract: In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107. date: 2018 date_type: published official_url: http://www.amfpd.jp full_text_status: public pres_type: paper event_title: The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) event_location: Kyoto, Japan event_dates: 3-6 July 2018 event_type: conference refereed: TRUE citation: Hoang, Ha and Hori, Tatsuki and Yasuda, To-oru and Kizu, Takio and Tsukagoshi, Kazuhito and Nabatame, Toshihide and Bui, Nguyen Quoc Trinh and Fujiwara, Akihiko (2018) Investigation on solution-processed In-Si-O thin film transistor via spin-coating method. In: The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 3-6 July 2018, Kyoto, Japan. document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001/1/Manuscript_FPD2018.pdf