@misc{SisLab3016,
           month = {November},
           title = {Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof},
          author = {Masahiro Aoyagi and Thanh Tung Bui and Naoya Watanabe and Katsuya Kikuchi and Wei Feng},
            year = {2017},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3016/},
        abstract = {Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.}
}