?url_ver=Z39.88-2004&rft_id=US9818645B2&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.relation=https%3A%2F%2Feprints.uet.vnu.edu.vn%2Feprints%2Fid%2Feprint%2F3016%2F&rft.title=Through+electrode%2C+manufacturing+method+thereof%2C+and+semiconductor+device+and+manufacturing+method+thereof&rft.creator=Aoyagi%2C+Masahiro&rft.creator=Bui%2C+Thanh+Tung&rft.creator=Watanabe%2C+Naoya&rft.creator=Kikuchi%2C+Katsuya&rft.creator=Feng%2C+Wei&rft.subject=Electronics+and+Computer+Engineering&rft.description=Embodiments+provided+are+a+through+electrode+that+can+be+manufactured+by+a+method+not+including+the+step+of+removing+a+side-wall+insulating+film+formed+at+the+bottom+part+of+the+through+hole+and+so+having+improved+electrical+characteristics+and+mechanical+reliability+and+a+manufacturing+method+thereof+as+well+as+a+semiconductor+device+and+a+manufacturing+method+thereof.+A+through+electrode+is+disposed+in+a+semiconductor+substrate%2C+and+includes%3A+a+conductive+layer%3B+a+side-wall+insulating+film+that+is+disposed+between+the+conductive+layer+and+the+semiconductor+substrate%2C+the+side-wall+insulating+film+being+represented+by+the+following+chemical+formula+(1)%2C+and+a+tubular+semiconductor+layer+disposed+between+the+conductive+layer+and+the+semiconductor+substrate%2C+the+semiconductor+layer+including+a+same+material+as+the+material+of+the+semiconductor+substrate.&rft.date=2017-11-14&rft.type=Patent&rft.type=NonPeerReviewed&rft.identifier=++US20170200644A1++(2017)+Through+electrode%2C+manufacturing+method+thereof%2C+and+semiconductor+device+and+manufacturing+method+thereof.++US9818645B2.+++&rft.relation=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS9818645B2%2Fen&rft.relation=US9818645B2