relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3016/
title: Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
creator: Aoyagi, Masahiro
creator: Bui, Thanh Tung
creator: Watanabe, Naoya
creator: Kikuchi, Katsuya
creator: Feng, Wei
subject: Electronics and Computer Engineering
description: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.
date: 2017-11-14
type: Patent
type: NonPeerReviewed
identifier:   US20170200644A1  (2017) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof.  US9818645B2.   
relation: https://patents.google.com/patent/US9818645B2/en
relation: US9818645B2