%0 Patent
%@ US9818645B2
%A Aoyagi, Masahiro
%A Bui, Thanh Tung
%A Watanabe, Naoya
%A Kikuchi, Katsuya
%A Feng, Wei
%D 2017
%F SisLab:3016
%T Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3016/
%X Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.