TY  - PAT
ID  - SisLab3016
UR  - https://patents.google.com/patent/US9818645B2/en
IS  - US9818645B2
A1  - Aoyagi, Masahiro
A1  - Bui, Thanh Tung
A1  - Watanabe, Naoya
A1  - Kikuchi, Katsuya
A1  - Feng, Wei
Y1  - 2017/11/14/
N2  - Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.
TI  - Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
AV  - none
ER  -