eprintid: 3016
rev_number: 12
eprint_status: archive
userid: 270
dir: disk0/00/00/30/16
datestamp: 2018-06-13 09:39:11
lastmod: 2018-06-13 09:39:11
status_changed: 2018-06-13 09:39:11
type: patent
metadata_visibility: show
creators_name: Aoyagi, Masahiro
creators_name: Bui, Thanh Tung
creators_name: Watanabe, Naoya
creators_name: Kikuchi, Katsuya
creators_name: Feng, Wei
creators_id: m-aoyagi@aist.go.jp
creators_id: tungbt@vnu.edu.vn
creators_id: naoya-watanabe@aist.go.jp
creators_id: k-kikuchi@aist.go.jp
creators_id: wei.feng@aist.go.jp
title: Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
ispublished: pub
subjects: ElectronicsandComputerEngineering
divisions: fac_fet
abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.
date: 2017-11-14
date_type: published
official_url: https://patents.google.com/patent/US9818645B2/en
id_number: US9818645B2
full_text_status: none
patent_applicant: US20170200644A1
citation:   US20170200644A1  (2017) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof.  US9818645B2.