@misc{SisLab3017,
           month = {May},
           title = {Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof},
          author = {Masahiro Aoyagi and Thanh Tung Bui and Naoya Watanabe and Fumiki Kato and Katsuya Kikuchi},
            year = {2018},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3017/},
        abstract = {Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).}
}