relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3017/
title: Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
creator: Aoyagi, Masahiro
creator: Bui, Thanh Tung
creator: Watanabe, Naoya
creator: Kato, Fumiki
creator: Kikuchi, Katsuya
subject: Electronics and Communications
subject: Electronics and Computer Engineering
description: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).
date: 2018-05-29
type: Patent
type: NonPeerReviewed
identifier:   US20160322282A1  (2018) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof.  US9984956B2.   
relation: https://patents.google.com/patent/US9984956B2/en
relation: US9984956B2