%0 Patent
%@ US9984956B2
%A Aoyagi, Masahiro
%A Bui, Thanh Tung
%A Watanabe, Naoya
%A Kato, Fumiki
%A Kikuchi, Katsuya
%D 2018
%F SisLab:3017
%T Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3017/
%X Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).