TY  - PAT
ID  - SisLab3017
UR  - https://patents.google.com/patent/US9984956B2/en
IS  - US9984956B2
A1  - Aoyagi, Masahiro
A1  - Bui, Thanh Tung
A1  - Watanabe, Naoya
A1  - Kato, Fumiki
A1  - Kikuchi, Katsuya
Y1  - 2018/05/29/
N2  - Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).
TI  - Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
AV  - none
ER  -