eprintid: 3017
rev_number: 8
eprint_status: archive
userid: 270
dir: disk0/00/00/30/17
datestamp: 2018-06-13 09:39:26
lastmod: 2018-06-13 09:39:26
status_changed: 2018-06-13 09:39:26
type: patent
metadata_visibility: show
creators_name: Aoyagi, Masahiro
creators_name: Bui, Thanh Tung
creators_name: Watanabe, Naoya
creators_name: Kato, Fumiki
creators_name: Kikuchi, Katsuya
creators_id: m-aoyagi@aist.go.jp
creators_id: tungbt@vnu.edu.vn
creators_id: naoya-watanabe@aist.go.jp
creators_id: Fumiki@gmail.com
creators_id: k-kikuchi@aist.go.jp
title: Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof
ispublished: pub
subjects: ECE
subjects: ElectronicsandComputerEngineering
divisions: fac_fet
abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).
date: 2018-05-29
date_type: published
official_url: https://patents.google.com/patent/US9984956B2/en
id_number: US9984956B2
full_text_status: none
patent_applicant: US20160322282A1
citation:   US20160322282A1  (2018) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof.  US9984956B2.