%0 Journal Article
%@ 2053-1591
%A Hoang, Ha
%A Hori, Tatsuki
%A Yasuda, To-oru
%A Kizu, Takio
%A Tsukagoshi, Kazuhito
%A Nabatame, Toshihide
%A Bui, Nguyen Quoc Trinh
%A Fujiwara, Akihiko
%D 2018
%F SisLab:3164
%I IOP publishing
%J Materials Research Express
%P 026410-1
%T Si-doping effect on solution-processed In-O thin-film transistors
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3164/
%V 6
%X In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first  time by a solution processing method. By varying the Si concentration in the In2O3–SiO2 binary oxide  structure up to 15 at%, the thicknesses, densities, and crystallinity of the resulting In–Si–O(ISO) thin  films were investigated by x-ray reflectivity (XRR) and x-ray diffraction techniques, while the  produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis  revealed that the increase in the content of Si dopant increased the thickness of the produced film and  reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase  even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a  reduction in the absolute value of threshold voltage VT close to 0 Vand low current in the off-state, as  compared to those of the non-doped indium oxide films, due to the reduced number of oxygen  defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The  ISO TFT with a Si content of 3 at% annealed at 400 °Cdemonstrated the smallest subthreshold swing  of 0.5 V/dec, VT of−5 V, mobility of 0.21 cm2 V−1s−1, and on/off current ratio of about 2×107.