eprintid: 3164
rev_number: 11
eprint_status: archive
userid: 303
dir: disk0/00/00/31/64
datestamp: 2018-11-20 09:05:19
lastmod: 2018-11-20 09:05:19
status_changed: 2018-11-20 09:05:19
type: article
metadata_visibility: show
creators_name: Hoang, Ha
creators_name: Hori, Tatsuki
creators_name: Yasuda, To-oru
creators_name: Kizu, Takio
creators_name: Tsukagoshi, Kazuhito
creators_name: Nabatame, Toshihide
creators_name: Bui, Nguyen Quoc Trinh
creators_name: Fujiwara, Akihiko
title: Si-doping effect on solution-processed In-O thin-film transistors
ispublished: pub
subjects: Phys
subjects: isi
divisions: fac_physic
abstract: In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first
time by a solution processing method. By varying the Si concentration in the In2O3–SiO2 binary oxide
structure up to 15 at%, the thicknesses, densities, and crystallinity of the resulting In–Si–O(ISO) thin
films were investigated by x-ray reflectivity (XRR) and x-ray diffraction techniques, while the
produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis
revealed that the increase in the content of Si dopant increased the thickness of the produced film and
reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase
even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a
reduction in the absolute value of threshold voltage VT close to 0 Vand low current in the off-state, as
compared to those of the non-doped indium oxide films, due to the reduced number of oxygen
defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The
ISO TFT with a Si content of 3 at% annealed at 400 °Cdemonstrated the smallest subthreshold swing
of 0.5 V/dec, VT of−5 V, mobility of 0.21 cm2 V−1s−1, and on/off current ratio of about 2×107.
date: 2018-11-14
date_type: published
publisher: IOP publishing
official_url: http://iopscience.iop.org/journal/2053-1591
id_number: https://doi.org/10.1088/2053-1591/aaecf9
full_text_status: public
publication: Materials Research Express
volume: 6
pagerange: 026410-1
refereed: TRUE
issn: 2053-1591
related_url_url: http://iopscience.iop.org/article/10.1088/2053-1591/aaecf9
projects: NAFOSTED; grant No. 103.02-2012.81
citation:   Hoang, Ha and Hori, Tatsuki and Yasuda, To-oru and Kizu, Takio and Tsukagoshi, Kazuhito and Nabatame, Toshihide and Bui, Nguyen Quoc Trinh and Fujiwara, Akihiko  (2018) Si-doping effect on solution-processed In-O thin-film transistors.  Materials Research Express, 6 .   026410-1.  ISSN 2053-1591     
document_url: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3164/1/%28published%29%20MRX6-026410.pdf