@article{SisLab3346,
           title = {Design Optimization of an Anisotropic Magnetoresistance Sensor for Detection of Magnetic Nanoparticles},
          author = {Dinh Tu Bui and Khac Quynh Le and Huu Duc Nguyen and Thi Huong Giang Do and Anh Tuan Phung and Thi Dung Tran and Viet Anh Cao},
            year = {2018},
         journal = {Journal of Electronic Materials},
             url = {https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3346/},
        abstract = {Recent studies have shown that the magnetic field sensitivity of an anisotropic
magnetoresistance (AMR) sensor using a single-layer Ni80Fe20 thin film can be
considerably improved by increasing the shape anisotropy of the film. In this
work, an effective approach for improving the sensitivity and reducing the
magnetic coercive field as well as the thermal noise contribution in an AMR
Wheatstone bridge sensor is proposed by combining multiple resistors in the
series?parallel combination circuits. Four different AMR sensor designs,
consisting of a single resistor, three and five resistors in series and six resistors
in series?parallel connection, were fabricated by using Ta (10 nm)/Ni80Fe20 (5 nm)/Ta (10 nm) films grown on thermally oxidized Si substrates under the presence and the absence of a biasing magnetic field (900 Oe). The results showed that the sensors based on series?parallel combination gain a magnetic sensitivity (SH) 1.72 times higher than that of the sensor based on the series connection. This optimized sensor has improved the capacity of detecting various oncentrations of magnetic nanoparticles with a detection limit of magnetic moments estimated to be about 0.56 microemu}
}