%A Duy Manh Luong
%A Huy Hoang Nguyen
%A Gia Duong Bach
%A Chi Hieu Ta
%J 2018 International Conference on Advanced Technologies for Communications (ATC)
%T Design of An Independently Biased Cascode GaN HEMT Microwave Power Amplifier
%X We propose an independently biased technique for
improving both efficiency and linearity of a cascode GaN HEMT
power amplifier at 2.1 GHz. The designed power amplifier
achieves power gain of 16.5 dB, output power of 32 dBm at power
added efficiency of 66 % for single-tone operation. For two-tone
operation with a spacing of 4 MHz, the designed amplifier can
achieve a power added efficiency of 35.8 % and a power gain
of 19.7 dB at a third order intermodulation distortion of -35
dBc. These achieved performance makes the designed amplifier
to be able to effectively apply to various promising wireless
communications applications like Long-Time Evolution (LTE)
mobile network or radar and WiFi.
%P 128-132
%D 2018
%C Ho Chi Minh city, Vietnam
%L SisLab3394