TY  - JOUR
ID  - SisLab3506
UR  - https://doi.org/10.1007/s11664-018-6822-4
A1  - Le, Khac Quynh
A1  - Bui, Dinh Tu
A1  - Cao, Viet Anh
A1  - Nguyen, Huu Duc
A1  - Phung, Anh Tuan
A1  - Tran, Tien Dung
A1  - Do, Thi Huong Giang
Y1  - 2019/02//
N2  - Recent studies have shown that the magnetic field sensitivity of an anisotropic magnetoresistance (AMR) sensor using a single-layer Ni80Fe20 thin film can be considerably improved by increasing the shape anisotropy of the film. In this work, an effective approach for improving the sensitivity and reducing the magnetic coercive field as well as the thermal noise contribution in an AMR Wheatstone bridge sensor is proposed by combining multiple resistors in the series?parallel combination circuits. Four different AMR sensor designs, consisting of a single resistor, three and five resistors in series and six resistors in series?parallel connection, were fabricated by using Ta (10 nm)/Ni80Fe20 (5 nm)/Ta (10 nm) films grown on thermally oxidized Si substratesunder the presence and the absence of a biasing magnetic field (900 Oe). Theresults showed that the sensors based on series?parallel combination gain a magnetic sensitivity (SH) 1.72 times higher than that of the sensor based on the series connection. This optimized sensor has improved the capacity of detecting various concentrations of magnetic nanoparticles with a detection limit of magnetic moments estimated to be about 0.56 uemu
PB  - springer
JF  - Journal of Electronic Materials
VL  - 48
SN  - 0361-5235
TI  - Design Optimization of an Anisotropic Magnetoresistance
Sensor for Detection of Magnetic Nanoparticles
SP  - 997
AV  - public
EP  - 1004
ER  -