relation: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3587/
title: High thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrate
creator: Duong, Anh Tuan
creator: Nguyen, Dinh Lam
creator: Nguyen, Manh Nghia
creator: Nguen, Thi Minh Hai
creator: Nguyen, Anh Duc
creator: Pham, Anh Tuan
creator: Ullah, Parman
creator: Zeeshan, Tahir
creator: Kim, Yong Soo
creator: Do, Quang Trung
creator: Nguyen, Tu
creator: Bui, Van Hao
creator: Raja, Das
creator: Pham, Thanh Huy
creator: Cho, Sunglae
subject: Engineering Physics
subject: ISI-indexed journals
description: Thermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019–1020 cm−3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019–1020 cm−3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 μW cm−1 K−2 at 220 K with a carrier concentration of 5.2 × 1019 cm−3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm−1 and −192 μVK−1, respectively.
publisher: IOP publishing
date: 2019
type: Article
type: PeerReviewed
format: application/pdf
language: en
identifier: https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3587/1/10.1088%402053-1591%40ab1031.pdf
identifier:   Duong, Anh Tuan and Nguyen, Dinh Lam and Nguyen, Manh Nghia and Nguen, Thi Minh Hai and Nguyen, Anh Duc and Pham, Anh Tuan and Ullah, Parman and Zeeshan, Tahir and Kim, Yong Soo and Do, Quang Trung and Nguyen, Tu and Bui, Van Hao and Raja, Das and Pham, Thanh Huy and Cho, Sunglae  (2019) High thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrate.  Materials Research Express .    ISSN 2053-1591