%0 Journal Article
%@ 2053-1591
%A Duong, Anh Tuan
%A Nguyen, Dinh Lam
%A Nguyen, Manh Nghia
%A Nguen, Thi Minh Hai
%A Nguyen, Anh Duc
%A Pham, Anh Tuan
%A Ullah, Parman
%A Zeeshan, Tahir
%A Kim, Yong Soo
%A Do, Quang Trung
%A Nguyen, Tu
%A Bui, Van Hao
%A Raja, Das
%A Pham, Thanh Huy
%A Cho, Sunglae
%D 2019
%F SisLab:3587
%I IOP publishing
%J Materials Research Express
%T High thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrate
%U https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3587/
%X Thermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019–1020 cm−3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019–1020 cm−3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 μW cm−1 K−2 at 220 K with a carrier concentration of 5.2 × 1019 cm−3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm−1 and −192 μVK−1, respectively.