TY  - JOUR
ID  - SisLab3587
UR  - https://eprints.uet.vnu.edu.vn/eprints/id/eprint/3587/
A1  - Duong, Anh Tuan
A1  - Nguyen, Dinh Lam
A1  - Nguyen, Manh Nghia
A1  - Nguen, Thi Minh Hai
A1  - Nguyen, Anh Duc
A1  - Pham, Anh Tuan
A1  - Ullah, Parman
A1  - Zeeshan, Tahir
A1  - Kim, Yong Soo
A1  - Do, Quang Trung
A1  - Nguyen, Tu
A1  - Bui, Van Hao
A1  - Raja, Das
A1  - Pham, Thanh Huy
A1  - Cho, Sunglae
Y1  - 2019///
N2  - Thermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019?1020 cm?3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019?1020 cm?3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 ?W cm?1 K?2 at 220 K with a carrier concentration of 5.2 × 1019 cm?3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm?1 and ?192 ?VK?1, respectively.
PB  - IOP publishing
JF  - Materials Research Express
SN  - 2053-1591
TI  - High thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrate
AV  - public
ER  -