%A Anh Tuan Duong
%A Dinh Lam Nguyen
%A Manh Nghia Nguyen
%A Thi Minh Hai Nguen
%A Anh Duc Nguyen
%A Anh Tuan Pham
%A Parman Ullah
%A Tahir Zeeshan
%A Yong Soo Kim
%A Quang Trung Do
%A Tu Nguyen
%A Van Hao Bui
%A Das Raja
%A Thanh Huy Pham
%A Sunglae Cho
%J Materials Research Express
%T High thermoelectric power factor in SnSe2 thin film grown on Al2O3 substrate
%X Thermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019–1020 cm−3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019–1020 cm−3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 μW cm−1 K−2 at 220 K with a carrier concentration of 5.2 × 1019 cm−3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm−1 and −192 μVK−1, respectively.
%D 2019
%I IOP publishing
%L SisLab3587