Do, Hong Minh and Vu, Thi Huyen Trang and Bui, Nguyen Quoc Trinh (2014) Huge on-current Ferroelectric-gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel. VNU Journal of Science, 30 . pp. 16-23. ISSN 0866-8612
Full text not available from this repository.Abstract
We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel. Keywords: PZT, Thin film transistor (TFT), ferroelectric, ITO, FeRAM.
| Item Type: | Article |
|---|---|
| Subjects: | Engineering Physics |
| Divisions: | Faculty of Engineering Physics and Nanotechnology (FEPN) |
| Depositing User: | Ms. Cam Le Tran Thi |
| Date Deposited: | 07 Nov 2015 04:42 |
| Last Modified: | 09 Nov 2015 05:54 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/1285 |
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