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Planar Hall Bead Array Counter Microchip with NiFe/IrMn Bilayers

Bui, Dinh Tu and Hung, T.Q. and Thanh, N.T. and Danh, T.M. and Nguyen, Huu Duc and Kim, CheolGi (2008) Planar Hall Bead Array Counter Microchip with NiFe/IrMn Bilayers. Journal of Applied Physics, 104 (7). 074701-074701.

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The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3×3 μm2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 mΩ/Oe. It was well applied for single Dynabeads® M-280 detection, where one bead can induce a signal change, ΔV∼2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment.

Item Type: Article
Uncontrolled Keywords: Hall effect;Hall effect devices;biological techniques;ferromagnetic materials;interface magnetism;iridium alloys;iron alloys;magnetic anisotropy;magnetic sensors;magnetoresistance;manganese alloys;nickel alloys;0707Df;8575Nn
Subjects: ?? Nano ??
Divisions: Faculty of Engineering Physics and Nanotechnology (FEPN)
Depositing User: Prof. Xuan-Tu Tran
Date Deposited: 27 Mar 2013 06:30
Last Modified: 21 May 2016 05:14

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