Nguyen, Quang Hoa and Nguyen, Thi Xuyen and Vuong, Quoc Viet and Vu, Thi Huyen Trang and Hoang, Ha and Hoang, Thi Thanh Tam and Vu, Thi Dung and Tran, Van Dung and Bui, Nguyen Quoc Trinh (2016) STUDY ON ITO THIN FILMS PREPARED BY MULTI-ANNEALING TECHNIQUE. Journal of Science and Technology, 54 (1A). pp. 136-142. ISSN 0866-708X
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Abstract
Indium tin oxide (ITO) thin films have been successfully prepared by a solution process followed by a multi-annealing method. In this study, we focus on the use of multi-annealing method, for which each layer was annealed at a suitable temperature, instead of a conventional annealing way, by means of a rapid thermal annealing system, in order to improve the film quality. The crystalline structure and surface morphology of the ITO thin films were investigated by using X-ray diffraction (XRD) spectrometer, atomic force microscope (AFM) and scanning electron microscope (SEM). It has been obtained that all of ITO films exhibit a single phase with (200)- and (444)-preferred orientations. The AFM and SEM observations show that the particle size of ITO films was about 10 nm and the ITO film thickness was 180 nm, respectively. In sequence, the electrical properties of ITO thin films were evaluated by using four-point probe and Hall effect measurement methods, and the optical properties were investigated by UV/VIS spectrometer. The achievement results show that the optimum ITO films possessed electrical resistivity of 2.6 × 10-3 Ωcm and transparency higher than 90%, which strongly supports to the application of electrode in solar cell, LED or transistor devices from viewpoints of low-cost production and low-energy consumption.
| Item Type: | Article |
|---|---|
| Subjects: | Engineering Physics |
| Divisions: | Faculty of Engineering Physics and Nanotechnology (FEPN) |
| Depositing User: | Dr. Bui Nguyen Quoc Trinh |
| Date Deposited: | 16 Nov 2017 04:26 |
| Last Modified: | 16 Nov 2017 04:26 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/2633 |
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