Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru (2018) Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications. International Journal of Electrical and Computer Engineering, 8 (2). ISSN 2088-8708 (In Press)
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Abstract
This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.
| Item Type: | Article |
|---|---|
| Subjects: | Electronics and Communications Scopus-indexed journals |
| Divisions: | Faculty of Electronics and Telecommunications (FET) |
| Depositing User: | Vu Tuan Anh |
| Date Deposited: | 12 Jan 2018 02:03 |
| Last Modified: | 12 Jan 2018 02:03 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/2914 |
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