Investigation on solution-processed In-Si-O thin film transistor via spin-coating method

Hoang, Ha and Hori, Tatsuki and Yasuda, To-oru and Kizu, Takio and Tsukagoshi, Kazuhito and Nabatame, Toshihide and Bui, Nguyen Quoc Trinh and Fujiwara, Akihiko (2018) Investigation on solution-processed In-Si-O thin film transistor via spin-coating method. In: The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 3-6 July 2018, Kyoto, Japan.

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Abstract

In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs were characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850 °C regardless the film thickness. The best ISO TFT showed the value of VT of –5 V, µ of 1.32 cm2/Vs, SS of 1 V/dec, and on/off current ratio about 107.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Engineering Physics
Divisions:	Faculty of Engineering Physics and Nanotechnology (FEPN)
Depositing User:	Dr. Bui Nguyen Quoc Trinh
Date Deposited:	24 Nov 2018 01:58
Last Modified:	24 Nov 2018 01:58
URI:	http://eprints.uet.vnu.edu.vn/eprints/id/eprint/3001

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