US20170200644A1 (2017) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof. US9818645B2.
Full text not available from this repository.Abstract
Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.
| Item Type: | Patent |
|---|---|
| Subjects: | Electronics and Communications > Electronics and Computer Engineering |
| Divisions: | Faculty of Electronics and Telecommunications (FET) |
| Depositing User: | Bùi Thanh Tùng |
| Date Deposited: | 13 Jun 2018 09:39 |
| Last Modified: | 13 Jun 2018 09:39 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/3016 |
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