US20160322282A1 (2018) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof. US9984956B2.
Full text not available from this repository.Abstract
Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).
| Item Type: | Patent |
|---|---|
| Subjects: | Electronics and Communications Electronics and Communications > Electronics and Computer Engineering |
| Divisions: | Faculty of Electronics and Telecommunications (FET) |
| Depositing User: | Bùi Thanh Tùng |
| Date Deposited: | 13 Jun 2018 09:39 |
| Last Modified: | 13 Jun 2018 09:39 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/3017 |
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