Nguyen, Duc Cuong and Joe, Sung‐yoon and Ha, Na Young and Park, Hui Joon and Park, Ji‐Yong and Ahn, Y. H. and Lee, Soonil (2016) Hole‐extraction layer dependence of defect formation and operation of planar CH3NH3PbI3 perovskite solar cells. physica status solidi - Rapid Research Letters, 11 (2). 1600395(1)-1600395(5). ISSN 1862-6270
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Abstract
Three planar CH3NH3PbI3 (MAPbI3) solar cells having the same structure except a hole‐extraction layer (HEL) showed distinctive difference in operation characteristics. Analysis of frequency‐dependent capacitance and dielectric‐loss spectra of the three MAPbI3 devices showed two types of recombination‐loss channels with different time constants that we attributed respectively to interface and bulk defects. Discrepancy in defect formation among the three devices with a HEL of PEDOT:PSS, NiOx, or Cu‐doped NiOx was not surprising because grain‐size distribution and crystalline quality of MAPbI3 can be affected by surface energy and morphology of underlying HELs. We were able to quantify interface and bulk defects in these MAPbI3solar cells based on systematic and simultaneous simulations of capacitance and dielectric‐loss spectra, and current–voltage characteristics by using the device simulator SCAPS.
| Item Type: | Article |
|---|---|
| Subjects: | Scopus-indexed journals ISI-indexed journals |
| Divisions: | Faculty of Engineering Physics and Nanotechnology (FEPN) |
| Depositing User: | Dr. Duc Cuong Nguyen |
| Date Deposited: | 15 Nov 2018 09:20 |
| Last Modified: | 15 Nov 2018 09:20 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/3144 |
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