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120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography

Nagahara, K. and Bui, Nguyen Quoc Trinh and Tokumitsu, E. and Inoue, S. and Shimoda, T. (2014) 120 nm Channel Length Ferroelectric Gate Thin-Film Transistor by Nano-imprinting Lithography. Japanese Journal of Applied Physics, 2014, 53 . 02BC14-1. ISSN 0021-4922

Full text not available from this repository.
Item Type: Article
Subjects: Engineering Physics
Divisions: Faculty of Engineering Physics and Nanotechnology (FEPN)
Depositing User: Ms. Cam Le Tran Thi
Date Deposited: 12 Aug 2015 03:40
Last Modified: 14 Aug 2015 07:50
URI: http://eprints.uet.vnu.edu.vn/eprints/id/eprint/1284

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