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A 300 GHz single varactor doubler in 40 nm CMOS

Vu, Tuan Anh and Takano, Kyoya and Fujishima, Minoru (2017) A 300 GHz single varactor doubler in 40 nm CMOS. In: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 30 Aug - 1 Sept 2017, Seoul, Korea.

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This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of -3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.

Item Type: Conference or Workshop Item (Poster)
Subjects: Electronics and Communications
Divisions: Faculty of Electronics and Telecommunications (FET)
Depositing User: Vu Tuan Anh
Date Deposited: 06 Nov 2017 21:18
Last Modified: 06 Nov 2017 21:18

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