Pham, Van Thanh and Bui, Nguyen Quoc Trinh and Takaaki, Miyasako and Phan, Trong Tue and Eisuke, Tokumitsu and Tatsuya, Shimoda (2013) Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure. Ferroelectrics Letters, 40 (2013). pp. 17-29.
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Abstract
The conductance method was applied to investigate the interface charge trap density (Dit) of solution processed ferroelectric gate thin film transistor (FGT) using indium-tin oxide (ITO)/ Pb(Zr,Ti)O3 (PZT)/Pt structure. As a result, a large value of Dit of MFS capacitor, i.e., Pt/PZT/ITO, was estimated to be 1.2 × 1014 eV−1 cm−2. This large Dit means that an interface between the ITO layer and the PZT layer is imperfect and it is one of themain reasons for the poor memory property of this FGT. By using transmission electron microscopy (TEM), this imperfect interface was clearly observed. Thus, it is concluded that improvement of this interface is critical for better memory performance.
| Item Type: | Article |
|---|---|
| Subjects: | Engineering Physics ISI-indexed journals |
| Divisions: | Faculty of Engineering Physics and Nanotechnology (FEPN) |
| Depositing User: | Dr. Bui Nguyen Quoc Trinh |
| Date Deposited: | 08 Nov 2017 07:18 |
| Last Modified: | 08 Nov 2017 07:18 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/2621 |
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