Do, Hong Minh and Nguyen, Van Loi and Nguyen, Huu Duc and Bui, Nguyen Quoc Trinh (2016) Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates. Journal of Science: Advanced Materials and Devices, 1 . pp. 75-79. ISSN 2468-2179
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Abstract
In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZT films crystallized at 450, 500 and 550 �C, instead of at conventional high temperatures (�600 �C). Investigation of the crystalline structure and electrical properties indicated that the PZT film, crystallized at 500 �C, was suitable for FGT fabrication because of a high (111) orientation, large remnant polarization of 38 mC/cm2 on SiO2/Si substrate and 17.8 mC/cm2 on glass, and low leakage current of 10�6 A/cm2. In sequence, we successfully fabricated FGT with all processes below 500 �C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of 105, field-effect mobility of 0.092 cm2 V�1 s�1, and retention time of 1 h.
| Item Type: | Article |
|---|---|
| Subjects: | Engineering Physics |
| Divisions: | Faculty of Engineering Physics and Nanotechnology (FEPN) |
| Depositing User: | Dr. Bui Nguyen Quoc Trinh |
| Date Deposited: | 09 Nov 2017 03:21 |
| Last Modified: | 09 Nov 2017 03:21 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/2624 |
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