Si-doping effect on solution-processed In-O thin-film transistors

Hoang, Ha and Hori, Tatsuki and Yasuda, To-oru and Kizu, Takio and Tsukagoshi, Kazuhito and Nabatame, Toshihide and Bui, Nguyen Quoc Trinh and Fujiwara, Akihiko (2018) Si-doping effect on solution-processed In-O thin-film transistors. Materials Research Express, 6 . 026410-1. ISSN 2053-1591

PDF Download (869kB)

Abstract

In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3–SiO2 binary oxide structure up to 15 at%, the thicknesses, densities, and crystallinity of the resulting In–Si–O(ISO) thin films were investigated by x-ray reflectivity (XRR) and x-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 Vand low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at% annealed at 400 °Cdemonstrated the smallest subthreshold swing of 0.5 V/dec, VT of−5 V, mobility of 0.21 cm2 V−1s−1, and on/off current ratio of about 2×107.

Item Type:	Article
Subjects:	Engineering Physics ISI-indexed journals
Divisions:	Faculty of Engineering Physics and Nanotechnology (FEPN)
Depositing User:	Dr. Bui Nguyen Quoc Trinh
Date Deposited:	20 Nov 2018 09:05
Last Modified:	20 Nov 2018 09:05
URI:	http://eprints.uet.vnu.edu.vn/eprints/id/eprint/3164

Actions (login required)

View Item