Nguyen Huy, Hoang and Luong Duy, Manh and Bach Gia, Duong
(2019)
A Novel Independently Biased 3-Stack GaN HEMT
Configuration for Efficient Design of
Microwave Amplifiers.
MDPI Applied Sciences, 9
(7).
p. 1510.
ISSN 2076-3417
Abstract
Abstract: The power amplifier (PA) and low-noise amplifier (LNA) are the most critical components of
transceiver systems including radar, mobile communications, satellite communications, etc. While the
PA is the key component of the transmitter (TX), the LNA is the key component of the receiver (RX) of
the transceiver system. It is pointed out that traditional design approaches for both the LNA and PA
face challenging drawbacks. When designing an LNA, the power gain and noise figure of the LNA
are difficult to improve simultaneously. For PA design, it indicates that efficiency and linearity of the
PA are also hard to improve simultaneously. This study aims to surmount this by proposing a novel
independently biased 3-stack GaN high-electron-mobility transistor (HEMT) configuration for efficient
design of both PA and LNA for next generation wireless communication systems. By employing an
independently biased technique, the proposed configuration can offer superior performance at both
small-signal (SS) for LNA design and large-signal (LS) for PA design compared with other typical circuit
configurations. Simulation results show that by utilizing an adaptive bias control of each transistor of
the proposed configuration, both power gain and noise figure can be improved simultaneously for the
LNA design. Moreover, efficiency and linearity can be also improved at the same time for the PA design.
Compared results with other typical configurations including a single-stage, conventional cascode,
independentlybiasedcascode,andconventional3-stackrevealsthattheproposedconfigurationexhibits
superior advantages at both SS and LS operation.
Keywords: GaN HEMT; independently biased; microwave engineering; RF circuit design; low-noise
amplifier; power amplifier
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