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Items where Author is "Feng, Wei"

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US20170200644A1 (2017) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof. US9818645B2.

Feng, Wei and Bui, Thanh Tung and Watanabe, Naoya and Shimamoto, Haruo and Aoyagi, Masahiro and Kikuchi, Katsuya (2016) Fabrication and stress analysis of annular-trench-isolated TSV. Microelectronics Reliability . ISSN 0026-2714 (In Press)

Feng, Wei and Bui, Thanh Tung and Watanabe, Naoya and Aoyagi, Masahiro and Kikuchi, Katsuya (2016) Low Residual Stress in Si Substrate of Annular-Trench-Isolated TSV. In: 2016 IEEE 66th Electronic Components and Technology Conference (ECTC).

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