Items where Author is "Kato, Fumiki"

Article

Bui, Thanh Tung and Suzuki, Motohiro and Kato, Fumiki and Nemoto, Shunsuke and Watanabe, Naoki and Aoyagi, Masahiro (2013) Sub-Micron-Accuracy Gold-to-Gold Interconnection Flip-Chip Bonding Approach for Electronics–Optics Heterogeneous Integration. Japanese Journal of Applied Physics, 52 (4S). 04CB08. ISSN 0021-4922

Conference or Workshop Item

Bui, Thanh Tung and Cheng, Xiaojin and Watanabe, Naoya and Kato, Fumiki and Kikuchi, Katsuya and Aoyagi, Masahiro (2016) A Prospective Low-k Insulator for Via-Last through-Silicon-Vias (TSVs) in 3D Integration. In: 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 2016.

Bui, Thanh Tung and Watanabe, Naoya and Cheng, Xiaojin and Kato, Fumiki and Kikuchi, Katsuya and Aoyagi, Masahiro (2013) Investigation of the applicability of parylene-HT as a dielectric layer for interconnections in 3D integration system. In: International Symposium on Frontiers of Materials Science, November 2013, Hanoi, Vietnam.

Bui, Thanh Tung and Suzuki, Motohiro and Kato, Fumiki and Watanabe, Naoya and Nemoto, Shunsuke and Kikuchi, Katsuya and Aoyagi, Masahiro (2013) Modified thermosonic flip-chip bonding based on electroplated Cu microbumps and concave pads for high-precision low-temperature assembly applications. In: 2013 IEEE Electronic Components and Technology Conference, 2013, Las Vegas, USA.

Bui, Thanh Tung and Kato, Fumiki and Watanabe, Naoya and Nemoto, Shunsuke and Kikuchi, Katsuya and Aoyagi, Masahiro (2013) 15-μm-pitch Cu/Au Interconnections Relied on Self-aligned Low-temperature Thermosonic Flip-chip Bonding Technique for A dvanced Chip Stacking Applications. In: International Conference on Solid State Devices and Materials, 2013, Fukuoka, Japan.

Patent

US20160322282A1 (2018) Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof. US9984956B2.

National Institute Of Advanced Industrial Science And Technology (2017) Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus. US9627347 B2.