Tran, Van Hoi and Bach, Gia Duong (2016) High gain low-noise amplifier design used for RF front end application. In: SW4PHD: the 2016 Scientific Workshop for PhD Students, 26 March 2016, Hanoi.
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Abstract
This paper presents the design and fabrication of a high gain low noise amplifier (LNA) at C-band, which suitable for RF front end application. In this paper, we propose a diagram of the two-stage cascade amplifier with different center frequency in order to create a good wide- band performance and high gain. The paper also proposes using negative feedback circuit to reduce the noise figure. The LNA has been fabricated on a PCB board with FR4 substrate using microstrip technology and pHEMT FET transistor amplifier with following specifications: Maximum overall gain of 26.046 dB, operating frequency from 4 GHz to 5 GHz, noise figure is about 1.2 dB, the reverse isolation of -29.5 dB, the LNA using a 5 V supply voltage respectively and total current consumptions of 20 mA. All the designed, simulated and fabricated processes were done using Agilent’ ADS 2009 package and machine LPKF Protomat C40.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Electronics and Communications > Communications Electronics and Communications |
| Divisions: | Faculty of Electronics and Telecommunications (FET) |
| Depositing User: | Dr Ngoc Thang Bui |
| Date Deposited: | 23 May 2016 02:20 |
| Last Modified: | 23 May 2016 02:22 |
| URI: | http://eprints.uet.vnu.edu.vn/eprints/id/eprint/1564 |
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